Publications

Journal Papers

  • Pik-Yiu Chan, Mukesh Gogna, Ernesto Suarez, Fuad Al-Amoody, Supriya Karmakar, Barry I. Miller, and Faquir C. JaiFloating Quantum Dot Gate Indium Gallium Arsenide Non-Volatile Memory using II-VI Gate Insulators, J. Electronic Materials, May 6, 2011. DOI: 10.1007/s11664-011-1655- 4.

  • F. C. Jain, B. Miller, E. Suarez, P-Y. Chan, S. Karmakar, F. Al-Amoody, M .Gogna, J. Chandy, and E. Heller, Spatial Wavefunction Switched (SWS) InGaAs FETs with II-VI Gate Insulators, J. Electronic Materials, 2011. DOI  10.1007/s11664-011-1667-0. June 2011.

  • F. Jain, J. Chandy, and E. Heller, Proc. Lester Eastman Conf. on High Performance Devices, pp. 44-45, August 3-5, 2010 (Rensselaer Polytechnic Institute, Troy, NY); accepted for publication in  the Int. J. High Speed Electronics, Vol. 20, 2011.

  • Fuad Al-Amoody, Ernesto Suarez, Angel Rodriguez, E. Heller, Wenli Huang and F. Jain, Core-Shell ZnxCd1-xSe/ZnyCd1-ySe Quantum Dots for Nonvolatile Memory and Electroluminescent Device Applications, J. Electronic Materials, 2011. Digital Object Identifier (DOI) 10.1007/s11664- 011-1663-4.

  • M. Gogna, E. Suarez, P-Y. Chan, F. Al-Amoody, S. Karmakar, and F. Jain, Nonvolatile Silicon Memory using GeOx-Cladded Ge Quantum Dots Self-Assembled on SiO2 and lattice-match II-VI Tunnel Insulator, J. Electronic Materials, 2011.

  • S. Karmakar, J. Chandy, F. Jain, Design of ADCS and DACs using 25nm Quantum dot gate FETs, Int. J. High Speed Electronics, Vol. 20, 2011.

  • D. Sidoti, S. Xhurxhi, T. Kujofsa, S. Cheruku, J. P. Correa, B. Bertoli, R. B. Rago, E. N. Suarez, F.C. Jain, and J.E. Ayers, Initial Misfit Dislocations in a Graded Heteroepitaxial Layer, J. Appl. Phys., 109, 023510-1 – 023510- 5, (January 2011).

  • B. Bertoli, D. Sidoti, S. Xhurxhi, T. Kujofsa, S. Cheruku, J. Reed, P. B. Rago, E. N. Suarez, F. C. Jain, and J. E. Ayers, “Equilibrium strain and dislocation density in exponentially graded Si(1-x)Ge(x)/Si (001),” J. Appl. Phys., 108, 113525-1 – 113525-5 (December 2010).

  • Supriya Karmakar, Ernesto Suarez, Mukesh Gogna and Faquir Jain, Quantum dot gate three state FETs using ZnS – ZnMgS lattice-matched gate insulator on silicon, J. Electronic Materials, 2011.

  • S. Vaddiraju, I. Tomazos, D. J. Burgess, F. C. Jain, F. Papadimitrakopoulos, ‘Technologies for continuous glucose monitoring: Current Approaches and Future Promises’, J. Diabetes Sci Technol. 2010; 4(6) 1540-1562.

Conference papers 2010-2011

  • T. Kujofsa, S. Cheruku, D. Sidoti, S. Xhurxhi, F. Obst, J. P. Correa, B. Bertoli, P. B. Rago, E. N. Suarez, X. Zhang, P. Li, F. C. Jain and J. E. Ayers,.   Lattice Relaxation by Plastic Flow in ZnSe/GaAs (001), 20th Proc. CMOC conference, March 16, 2011 (Yale, New Haven, CT).

  • R. Croce Jr, P. Gogna, M.  Gogna, A. Islam, L. Zuo, K. Zhu, M. Roknshariki, V. Sagar, F. Papadimitrakopoulos, S. Islam, and F. Jain, Finite-state machine architecture for implantable biosensor platform using optical communication,20th Proc. CMOC conference, March 16, 2011 (Yale, New Haven, CT).

  • Supriya Karmakar, John A. Chandy and Faquir C. Jain, Design of four bit ADC using three state Quantum Dot Gate FETs, 20th Proc. CMOC conference, pp. 53-54, March 16, 2011 (Yale, New Haven, CT).

  • Fuad Al-Amoody, Ernesto Suarez, E. Heller, Wenli Huang and F. Jain, II-VI Cladded Quantum Dots for Nonvolatile Memory Applications, 20th Proc. CMOC conference, pp. 55-56, March 16, 2011 (Yale, New Haven, CT).

  • S. Xhurxhi, F. Obst, D. Sidoti, B. Bertoli, T. Kujofsa, S. Cheruku, J. P. Correa, P. B. Rago, E. N. Suarez, F. C. Jain, and J. E. Ayers S-Graded Buffer Layers for Semiconductor Devices, 20th Proc. CMOC conference, pp. 61-63, March 16, 2011 (Yale, New Haven, CT).

  • Ernesto Suarez, Mukesh Gogna, Fuad Al-Amoody, Supriya Kumar, John Ayers, Evan Heller, and Faquir Jain (UConn).Quantum Dot Nonvolatile Memory using ZnS/ZnMgS/ZnS Tunneling Gate Insulator on  SOI substrates, 20th Proc. CMOC conference, pp. 67-68, March 16, 2011 (Yale, New Haven, CT).

  • Brian Outlaw, Ali Mirza, Muhammad Khokhar, Robert Croce, Supriya Karmakar, Mukesh Gogna, and Faquir Jain, N-MOS Inverters using Quantum Dot Gate (QDG) FETs, 20th Proc. CMOC conference, pp. 75-77, March 16, 2011 (Yale, New Haven, CT).

  • Kavitha Baskar, Mukesh Gogna, Supriya Karmakar, Fotios Papadimitrakopoulos, and Faquir Jain Site Specific Si/Ge/Si-Ge Dots Cladded with Oxide, 20th Proc. CMOC conference, p. 78, March 16, 2011 (Yale, New Haven, CT).

  • Pik-Yiu Chan, Mukesh Gogna, Ernesto Suarez, Fuad Al-Amoody, Supriya Karmakar, Barry I. Miller, and Faquir C. JaiFloating Quantum Dot Gate Indium Gallium Arsenide Non-Volatile Memoryusing II-VI Gate Insulators, J. Electronic Materials, 2011.

  • F. C. Jain, B. Miller, E. Suarez, P-Y. Chan, S. Karmakar, F. Al- Amoody, M .Gogna, J. Chandy, and E. Heller, Spatial Wavefunction Switched (SWS) InGaAs FETs with II-VI Gate Insulators, J. Electronic Materials, 2011.

  • F. Jain, J. Chandy, and E. Heller, Proc. Lester Eastman Conf. on High Performance Devices, pp. 44-45, August 3-5, 2010 (Rensselaer Polytechnic Institute, Troy, NY); accepted for publication in  the Int. J. High Speed Electronics, Vol. 20, 2011.

  • Fuad Al-Amoody, Ernesto Suarez, Angel Rodriguez, E. Heller, Wenli Huang and F. Jain, Core-Shell ZnxCd1-xSe/ZnyCd1-ySe Quantum Dots for Nonvolatile Memory and Electroluminescent Device Applications, J. Electronic Materials, 2011.

  • M. Gogna, E. Suarez, P-Y. Chan, F. Al-Amoody, S. Karmakar, and F. Jain, Nonvolatile Silicon Memory using GeOx-Cladded Ge Quantum Dots Self-Assembled on SiO2 and lattice-match II-VI Tunnel Insulator, J. Electronic Materials, 2011.

  • S. Karmakar, J. Chandy, F. Jain, Design of ADCS and DACs using 25nm Quantum dot gate FETs, Int. J. High Speed Electronics, Vol. 20, 2011.

  • Supriya Karmakar, Ernesto Suarez, Mukesh Gogna and Faquir Jain, Quantum dot gate three state FETs using ZnS – ZnMgS lattice-matched gate insulator on silicon, J. Electronic Materials, 2011.

  • S. Vaddiraju, I. Tomazos, D.J. Burgess, F.C. Jain, F. Papadimitrakopoulos, ‘GlucowizzardT: A splinter-sized continuous glucosemonitoring device’, 10th Annual Diabetes Technology Meeting, Bethesda, MD,2010.